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A model linking immediate serial recall, the Hebb repetition effect and the learning of phonological word forms.
Authors:
Page, M., & NORRIS, D.
Reference:
Philosophical Transactions of the Royal Society B, 364, 3737-3753
Year of publication:
2009
CBU number:
7079
Abstract:
We briefly review the considerable evidence for a common ordering mechanism underlying both immediate serial recall (ISR) tasks (e.g. digit span, non-word repetition) and the learning of phonological word forms. In addition, we discuss how recent work on the Hebb repetition effect is consistent with the idea that learning in this task is itself a laboratory analogue of the sequence-learning component of phonological word-form learning. In this light, we present a unifying modelling framework that seeks to account for ISR and Hebb repetition effects, while being extensible to word-form learning. Because word-form learning is performed in the service of later word recognition, our modelling framework also subsumes a mechanism for word recognition from continuous speech. Simulations of a computational implementation of the modelling framework are presented and are shown to be in accordance with data from the Hebb repetition paradigm.
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